STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 3-Pin Hip-247 SCT040W120G3AG
- RS Stock No.:
- 215-234
- Mfr. Part No.:
- SCT040W120G3AG
- Manufacturer:
- STMicroelectronics
The image is for reference only, please refer to product details and specifications
Subtotal (1 tube of 30 units)*
TWD18,306.00
(exc. GST)
TWD19,221.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from February 15, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 + | TWD610.20 | TWD18,306.00 |
*price indicative
- RS Stock No.:
- 215-234
- Mfr. Part No.:
- SCT040W120G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Related links
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