onsemi NTB N-Channel MOSFET, 201 A, 100 V Enhancement, 3-Pin TO-263 NTB004N10G
- RS Stock No.:
- 202-5687
- Mfr. Part No.:
- NTB004N10G
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 800 units)*
TWD126,960.00
(exc. GST)
TWD133,312.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 1,600 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 3200 | TWD158.70 | TWD126,960.00 |
| 4000 + | TWD155.50 | TWD124,400.00 |
*price indicative
- RS Stock No.:
- 202-5687
- Mfr. Part No.:
- NTB004N10G
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 201A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.82mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 175nC | |
| Maximum Power Dissipation Pd | 340W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 15.88mm | |
| Standards/Approvals | Pb-Free and are RoHS | |
| Width | 4.83mm | |
| Length | 10.63mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 201A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.82mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 175nC | ||
Maximum Power Dissipation Pd 340W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 15.88mm | ||
Standards/Approvals Pb-Free and are RoHS | ||
Width 4.83mm | ||
Length 10.63mm | ||
Automotive Standard No | ||
The ON Semiconductor Power MOSFET runs with 201 Ampere and 100 Volts. It can be used in Hot Swap in 48 V systems.
Low drain to source on resistance
High current capability
Wide safe operating area
Pb free
Halogen free
RoHS compliant
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