onsemi NTB N-Channel MOSFET & Diode, 60 A, 100 V Enhancement, 3-Pin TO-263 NTBS9D0N10MC
- RS Stock No.:
- 205-2496
- Mfr. Part No.:
- NTBS9D0N10MC
- Manufacturer:
- onsemi
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
TWD859.00
(exc. GST)
TWD902.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Last RS stock
- Final 1,500 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 190 | TWD85.90 | TWD859.00 |
| 200 - 390 | TWD84.00 | TWD840.00 |
| 400 + | TWD82.60 | TWD826.00 |
*price indicative
- RS Stock No.:
- 205-2496
- Mfr. Part No.:
- NTBS9D0N10MC
- Manufacturer:
- onsemi
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | NTB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.6mm | |
| Standards/Approvals | RoHS | |
| Width | 9.6mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series NTB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 14.6mm | ||
Standards/Approvals RoHS | ||
Width 9.6mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
The ON Semiconductor single N-channel 100V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 60A
Drain to source on resistance rating is 9.0mohm
Low RDS(on) to minimize conduction losses
Optimized switching performance
Low QG and capacitance to minimize driver losses
Industry’s lowest Qrr and softest body-diode for superior low noise switching
Lowers switching noise/EMI
High efficiency with lower switching spike and EMI
Package type is D2PAK3
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