Infineon iPB Type N-Channel MOSFET, 201 A, 40 V Enhancement, 3-Pin TO-263 IPB011N04NF2SATMA1

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Subtotal (1 pack of 2 units)*

TWD266.00

(exc. GST)

TWD279.30

(inc. GST)

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  • 800 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8TWD133.00TWD266.00
10 - 48TWD115.00TWD230.00
50 - 98TWD90.00TWD180.00
100 - 248TWD72.50TWD145.00
250 +TWD71.50TWD143.00

*price indicative

Packaging Options:
RS Stock No.:
262-5843
Mfr. Part No.:
IPB011N04NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

201A

Maximum Drain Source Voltage Vds

40V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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