Vishay EF N-Channel MOSFET, 36 A, 650 V Enhancement, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

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Subtotal (1 reel of 3000 units)*

TWD358,500.00

(exc. GST)

TWD376,440.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000TWD119.50TWD358,500.00
6000 +TWD115.90TWD347,700.00

*price indicative

RS Stock No.:
200-6830
Mfr. Part No.:
SIHH070N60EF-T1GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 8 x 8

Series

EF

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

71mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

202W

Typical Gate Charge Qg @ Vgs

75nC

Maximum Gate Source Voltage Vgs

30V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

8.1mm

Length

8.1mm

Standards/Approvals

No

Width

1.05mm

Automotive Standard

No

The Vishay SIHH070N60EF-T1GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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