Vishay SiSHA10DN N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISHA10DN-T1-GE3

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Subtotal (1 pack of 25 units)*

TWD1,055.00

(exc. GST)

TWD1,107.75

(inc. GST)

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Units
Per unit
Per Pack*
25 - 725TWD42.20TWD1,055.00
750 - 1475TWD41.40TWD1,035.00
1500 +TWD40.60TWD1,015.00

*price indicative

Packaging Options:
RS Stock No.:
188-5146
Mfr. Part No.:
SISHA10DN-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

SiSHA10DN

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-16V, +20V

Maximum Power Dissipation Pd

39W

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.3mm

Height

930μm

Length

3.3mm

Automotive Standard

No

N-Channel 30 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET

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