Vishay Dual TrenchFET 2 N-Channel MOSFET, 19.8 A, 20 V Enhancement, 8-Pin SO-8 SI4204DY-T1-GE3
- RS Stock No.:
- 180-8014
- Mfr. Part No.:
- SI4204DY-T1-GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD475.00
(exc. GST)
TWD498.75
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from May 24, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 620 | TWD95.00 | TWD475.00 |
| 625 - 1245 | TWD92.60 | TWD463.00 |
| 1250 + | TWD91.20 | TWD456.00 |
*price indicative
- RS Stock No.:
- 180-8014
- Mfr. Part No.:
- SI4204DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 19.8A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.006Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.25W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.05mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.65mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 19.8A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.006Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.25W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Length 3.05mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.65mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount dual N-channel MOSFET is a new age product with a drain-source voltage of 20V. It also has drain-source resistance of 4.6mohm at a gate-source voltage of 10V. It has continuous drain current of 19.8A. The MOSFET has a maximum power rating of 3.25W. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• DC/DC Converter
• Fixed Telecommunication
• Notebook PC
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
• Rg tested
• UIS tested
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