Vishay Dual TrenchFET 2 N-Channel MOSFET, 31.8 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3

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Subtotal (1 reel of 3000 units)*

TWD74,400.00

(exc. GST)

TWD78,120.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 12000TWD24.80TWD74,400.00
15000 +TWD24.10TWD72,300.00

*price indicative

RS Stock No.:
228-2936
Mfr. Part No.:
SIZ256DT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

31.8A

Maximum Drain Source Voltage Vds

70V

Package Type

PowerPAIR 3 x 3S

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0176Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

12V

Maximum Power Dissipation Pd

33W

Typical Gate Charge Qg @ Vgs

18nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 70 V (D-S) MOSFET.

100 % Rg and UIS tested

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