Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2
- RS Stock No.:
- 214-4476
- Distrelec Article No.:
- 304-39-427
- Mfr. Part No.:
- SN7002NH6327XTSA2
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 200 units)*
TWD800.00
(exc. GST)
TWD840.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
- 2,600 unit(s) ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 200 - 600 | TWD4.00 | TWD800.00 |
| 800 - 1400 | TWD3.90 | TWD780.00 |
| 1600 + | TWD3.60 | TWD720.00 |
*price indicative
- RS Stock No.:
- 214-4476
- Distrelec Article No.:
- 304-39-427
- Mfr. Part No.:
- SN7002NH6327XTSA2
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Power Dissipation Pd | 0.36W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC61249-2-21, AEC Q101 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Power Dissipation Pd 0.36W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC61249-2-21, AEC Q101 | ||
Automotive Standard No | ||
Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 5Ω Drain Source Resistance - SN7002NH6327XTSA2
Features and Benefits:
• 5Ω Rds(on) enabling controlled low-current conduction
• 200mA continuous drain current for small-signal loads
• 1.2V forward voltage supporting predictable diode drop
• 1.5nC typical gate charge for faster gate transitions
• 0.36W power dissipation for moderate thermal loading
Applications
• Ideal for low-current power routing in consumer electronics
• Used with small motor-driver interface circuits
• Can be used for level-shifting and signal multiplexing
• Suitable for sensor-conditioning and signal isolation tasks
What package and mounting type does it use for PCB assembly?
How does it perform across temperature extremes in harsh environments?
What gate and drain voltage limits must be observed during design?
Are there industry material or process standards associated with the component?
Related links
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS7728NH6327XTSA2
- Infineon SIPMOS N-Channel MOSFET 60 V, 3-Pin SOT-23 SN7002NH6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS138NH6327XTSA2
- DiodesZetex Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SN7002I Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 SN7002IXTSA1
