Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212 SQS966ENW-T1_GE3
- RS Stock No.:
- 178-3851
- Mfr. Part No.:
- SQS966ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 25 units)*
TWD567.50
(exc. GST)
TWD596.00
(inc. GST)
Add 75 units to get free delivery
- Shipping from September 23, 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 725 | TWD22.70 | TWD567.50 |
| 750 - 1475 | TWD22.20 | TWD555.00 |
| 1500 + | TWD21.80 | TWD545.00 |
*price indicative
- RS Stock No.:
- 178-3851
- Mfr. Part No.:
- SQS966ENW-T1_GE3
- Manufacturer:
- Vishay Siliconix
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Maximum Power Dissipation Pd | 27.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Height | 1.07mm | |
| Width | 3.15 mm | |
| Standards/Approvals | No | |
| Length | 3.15mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Maximum Power Dissipation Pd 27.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Height 1.07mm | ||
Width 3.15 mm | ||
Standards/Approvals No | ||
Length 3.15mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
Related links
- Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SQS944ENW-T1_GE3
- Vishay Siliconix Dual TrenchFET 2 Type N 30 A 8-Pin SO-8
- Vishay Siliconix Dual TrenchFET 2 Type N 30 A 8-Pin SO-8 SQJ504EP-T1_GE3
- Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin PowerPAK 1212-8 Dual
- Vishay Dual N Channel Mosfet TrenchFET 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212