Vishay Dual TrenchFET 2 N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3
- RS Stock No.:
- 178-3703
- Mfr. Part No.:
- SiZ350DT-T1-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 reel of 3000 units)*
TWD59,100.00
(exc. GST)
TWD62,040.00
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 12000 | TWD19.70 | TWD59,100.00 |
| 15000 + | TWD19.10 | TWD57,300.00 |
*price indicative
- RS Stock No.:
- 178-3703
- Mfr. Part No.:
- SiZ350DT-T1-GE3
- Manufacturer:
- Vishay
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 16.7W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Maximum Gate Source Voltage Vgs | -12V, +16V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Width | 3mm | |
| Height | 750μm | |
| Length | 3mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 16.7W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Maximum Gate Source Voltage Vgs -12V, +16V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Width 3mm | ||
Height 750μm | ||
Length 3mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
RoHS Status: Exempt
Related links
- Vishay Siliconix Dual TrenchFET 2 N-Channel Power MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3 SiZ350DT-T1-GE3
- Vishay Siliconix Dual TrenchFET 2 N-Channel Power MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3 SiZ348DT-T1-GE3
- Vishay Dual TrenchFET 2 N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
- Vishay Dual TrenchFET 2 N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3
- Vishay Dual TrenchFET 2 N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3
- Vishay Dual TrenchFET 2 N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3
- Vishay Dual TrenchFET 2 N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF928DT-T1-GE3
- Vishay Dual TrenchFET Gen IV 2 N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAIR 3 x 3FDC SiZ250DT-T1-GE3