Vishay IRFI Type N-Channel MOSFET, 3.7 A, 400 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 178-0848
- Mfr. Part No.:
- IRFI730GPBF
- Manufacturer:
- Vishay
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Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD1,895.00
(exc. GST)
TWD1,990.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 50 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD37.90 | TWD1,895.00 |
| 100 - 450 | TWD37.10 | TWD1,855.00 |
| 500 + | TWD33.40 | TWD1,670.00 |
*price indicative
- RS Stock No.:
- 178-0848
- Mfr. Part No.:
- IRFI730GPBF
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.7A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | IRFI | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.8mm | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.7A | ||
Maximum Drain Source Voltage Vds 400V | ||
Series IRFI | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 9.8mm | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Automotive Standard No | ||
Vishay IRFI730G Series Power MOSFET, 400V Drain Source Voltage, 3.7A Maximum Continuous Drain Current - IRFI730GPBF
This power MOSFET is a high-voltage switching device used to control current in power-conversion and switching circuits. It is an enhancement-mode N-channel transistor designed for through-hole mounting in TO-220 packages and suited to applications requiring high drain-to-source voltage tolerance and standard single-supply gate drive arrangements.
Features and Benefits:
• 400V maximum drain-to-source voltage supports high-voltage switching • 3.7A continuous drain current enables moderate load handling • 35W maximum power dissipation allows sustained thermal loading • 1Ω maximum Rds(on) aids predictable conduction losses • 38nC typical gate charge for reliable switching performance • 20V gate-source rating provides wide drive tolerance
Applications
• Suitable for switch-mode power supplies in industrial equipment • Ideal for motor-drive gate stages in automation systems • Used for high-voltage relay replacement in control panels • Can be used for line-side snubber or clamp circuitry • Suitable for bench power supplies and laboratory power modules
What mounting considerations affect thermal management?
The through-hole TO-220 format permits direct heatsink attachment to the package tab for improved heat transfer and reduced junction temperature.
How does the device behave across extreme ambient temperatures?
The transistor operates between -55°C and 150°C, enabling use in environments with wide thermal variation while maintaining electrical characteristics.
What is the typical switching charge impact on drive circuits?
The 38nC gate charge defines the energy required from the driver and influences switching speed and driver current requirements during transitions.
Are there limits on gate drive to prevent damage?
The maximum gate-source voltage is 20V, which must not be exceeded to avoid gate-oxide stress and potential device failure.
Related links
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