Vishay IRF740 Type N-Channel MOSFET, 10 A, 400 V Enhancement, 3-Pin TO-220 IRF740PBF

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing options

Subtotal (1 tube of 50 units)*

TWD1,770.00

(exc. GST)

TWD1,858.50

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 750 unit(s) shipping from June 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
Per Tube*
50 - 200TWD35.40TWD1,770.00
250 +TWD31.90TWD1,595.00

*price indicative

RS Stock No.:
178-0812
Mfr. Part No.:
IRF740PBF
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

400V

Package Type

TO-220

Series

IRF740

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

550mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

2V

Typical Gate Charge Qg @ Vgs

63nC

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

150°C

Height

9.01mm

Length

10.41mm

Standards/Approvals

No

Width

4.7mm

Automotive Standard

No

Vishay IRF740 Series Power MOSFET, 400V Drain Source Voltage, 10A Continuous Drain Current - IRF740PBF


This power MOSFET is a high-voltage N-channel enhancement device designed for use in industrial switching and power-control circuits. It operates across a wide temperature range and is supplied in a through-hole TO-220AB package suitable for assemblies where robust mounting and straightforward heat-sinking are required. The device is intended for applications demanding sustained current handling and elevated voltage tolerance.

Features and Benefits:


• 400V drain-source rating for high-voltage switching applications • 10A continuous drain current to support moderate power loads • 125W power dissipation for reliable thermal performance • 550mΩ RDS(on) enabling efficient conduction in switching roles • 63nC typical gate charge to inform drive requirements • 20V maximum gate-source voltage for gate-drive margin

Applications


• Suitable for switch-mode power supply primary switching • Ideal for motor-control inverter stages in automation systems • Used for high-voltage power converters in industrial equipment • Can be used for power management in test and measurement rigs

What mounting method does the device require for heat management?


It is a through-hole component in a TO-220AB package, allowing direct attachment to heatsinks using a fastener and insulating hardware if required.

What temperature extremes can it tolerate during operation?


The device is specified to operate down to -55°C and up to 150°C, making it suitable for a wide range of environmental conditions.

What should be considered when designing the gate drive?


The maximum gate-source voltage is 20V and the typical gate charge is 63nC at VGS, so the driver must supply sufficient charge and respect the 20V limit to avoid gate overstress.

Is the device compliant with common environmental material standards?


The component conforms to RoHS directives on restricted hazardous substances.

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy