Vishay IRFR320 N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252 IRFR320TRPBF

RS Stock No.:: 812-0626
Mfr. Part No.:: IRFR320TRPBF
Manufacturer:: Vishay

Vishay IRFR320 N-Channel Power MOSFET, 3.1 A, 400 V Enhancement, 3-Pin TO-252 IRFR320TRPBF

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Subtotal (1 pack of 10 units)*

TWD368.00

(exc. GST)

TWD386.40

(inc. GST)

FREE delivery for orders over NT$1,300.00

In Stock

1,920 unit(s) ready to ship from another location

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 +	TWD36.80	TWD368.00

*price indicative

RS Stock No.:: 812-0626
Mfr. Part No.:: IRFR320TRPBF
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Power MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	3.1A
	Maximum Drain Source Voltage Vds	400V
	Package Type	TO-252
	Series	IRFR320
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	42W
	Forward Voltage Vf	1.6V
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	6.73mm
	Height	2.38mm
	Width	6.22mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Power MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 3.1A
	Maximum Drain Source Voltage Vds 400V
	Package Type TO-252
	Series IRFR320
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 42W
	Forward Voltage Vf 1.6V
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 6.73mm
	Height 2.38mm
	Width 6.22mm
	Automotive Standard No

Vishay IRFR320 Series Power MOSFET, 400V Drain Source Voltage, 3.1A Continuous Drain Current - IRFR320TRPBF

This power MOSFET is a high-voltage switching transistor intended for surface-mount board assemblies in power conversion and control circuits. It operates as an N-channel enhancement device and is designed to handle elevated drain-to-source voltages and moderate continuous currents, making it suitable for switching and energy-management roles in industrial and consumer electronics.

Features and Benefits:

• 400V maximum drain-to-source voltage enables high-voltage switching capability
• 3.1A continuous drain current supports moderate load currents
• 1.8Ω maximum Rds(on) reduces conduction losses under load
• 42W maximum power dissipation allows sustained thermal handling
• 20nC typical gate charge enables predictable switching behaviour
• 20V gate-source limit ensures compatibility with standard gate drivers

Applications

• Suitable for switch-mode power supplies and converters
• Ideal for motor control in low-power systems
• Used for primary-side power switching in industrial equipment
• Can be used for electronic load protection circuits
• Appropriate for high-voltage relay replacement on boards

What thermal range can be expected for operation?

The device is specified to function between -55°C and 150°C, permitting use across extended temperature environments.

How is the component packaged for assembly?

It is supplied in a three-pin TO-252 surface-mount package suitable for automated PCB placement.

What gate drive considerations are necessary?

Drivers should respect a maximum gate-source rating of 20V and account for the typical 20nC gate charge when sizing drive current and switching speed.

Is this suitable for automotive-grade designs?

The part does not meet automotive standards, so it is not intended for certified automotive system use.