ROHM RQ5E025SN Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 3-Pin SC-96 RQ5E025SNTL
- RS Stock No.:
- 171-9804
- Mfr. Part No.:
- RQ5E025SNTL
- Manufacturer:
- ROHM
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Bulk discount available
Subtotal (1 pack of 100 units)*
TWD920.00
(exc. GST)
TWD966.00
(inc. GST)
Add 200 units to get free delivery
Temporarily out of stock
- Shipping from July 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | TWD9.20 | TWD920.00 |
| 500 - 900 | TWD9.00 | TWD900.00 |
| 1000 - 1400 | TWD8.80 | TWD880.00 |
| 1500 - 1900 | TWD8.60 | TWD860.00 |
| 2000 + | TWD8.40 | TWD840.00 |
*price indicative
- RS Stock No.:
- 171-9804
- Mfr. Part No.:
- RQ5E025SNTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-96 | |
| Series | RQ5E025SN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 118mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 0.95mm | |
| Width | 1.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-96 | ||
Series RQ5E025SN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 118mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 0.95mm | ||
Width 1.8 mm | ||
Automotive Standard No | ||
RQ5E025SN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching.
Low on -resistance.
Built-in G-S Protection Diode.
Small Surface Mount Package(TSMT3).
Pb-free lead plating
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