ROHM RSR010N10 Type N-Channel MOSFET, 1 A, 100 V Enhancement, 3-Pin SC-96 RQ5P010SNTL
- RS Stock No.:
- 124-6826
- Mfr. Part No.:
- RQ5P010SNTL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 20 units)*
TWD232.00
(exc. GST)
TWD243.60
(inc. GST)
Add 120 units to get free delivery
Temporarily out of stock
- Shipping from July 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | TWD11.60 | TWD232.00 |
| 100 - 180 | TWD11.30 | TWD226.00 |
| 200 - 480 | TWD11.00 | TWD220.00 |
| 500 - 980 | TWD10.80 | TWD216.00 |
| 1000 + | TWD10.50 | TWD210.00 |
*price indicative
- RS Stock No.:
- 124-6826
- Mfr. Part No.:
- RQ5P010SNTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SC-96 | |
| Series | RSR010N10 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.8 mm | |
| Height | 0.95mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SC-96 | ||
Series RSR010N10 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.8 mm | ||
Height 0.95mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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