ROHM RRR015P03 Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SC-96 RQ5E015RPTL
- RS Stock No.:
- 124-6809
- Mfr. Part No.:
- RQ5E015RPTL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 30 units)*
TWD384.00
(exc. GST)
TWD403.20
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 30 - 120 | TWD12.80 | TWD384.00 |
| 150 - 270 | TWD12.50 | TWD375.00 |
| 300 - 720 | TWD12.20 | TWD366.00 |
| 750 - 1470 | TWD11.90 | TWD357.00 |
| 1500 + | TWD11.60 | TWD348.00 |
*price indicative
- RS Stock No.:
- 124-6809
- Mfr. Part No.:
- RQ5E015RPTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-96 | |
| Series | RRR015P03 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.2nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Width | 1.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-96 | ||
Series RRR015P03 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.2nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Maximum Operating Temperature 150°C | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Length 3mm | ||
Width 1.8 mm | ||
Automotive Standard No | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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