Infineon CoolMOS P6 N-Channel MOSFET, 37.9 A, 650 V Enhancement, 4-Pin TO-220 IPP60R099P6XKSA1
- RS Stock No.:
- 168-5936
- Mfr. Part No.:
- IPP60R099P6XKSA1
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
TWD6,420.00
(exc. GST)
TWD6,741.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 400 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 200 | TWD128.40 | TWD6,420.00 |
| 250 + | TWD125.80 | TWD6,290.00 |
*price indicative
- RS Stock No.:
- 168-5936
- Mfr. Part No.:
- IPP60R099P6XKSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 37.9A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | CoolMOS P6 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -30V, +30V | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.36mm | |
| Width | 4.57mm | |
| Height | 15.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 37.9A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series CoolMOS P6 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -30V, +30V | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.36mm | ||
Width 4.57mm | ||
Height 15.95mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon CoolMOS™ P6 Series MOSFET, 37.9A Maximum Continuous Drain Current, 278W Maximum Power Dissipation - IPP60R099P6XKSA1
This MOSFET is tailored for high-performance applications in need of efficient power management. With a maximum continuous drain current of 37.9A and a drain-source voltage rating of 650V, it excels in automation and electronic sectors. Its enhancement mode N-channel configuration allows for effective switching capabilities, making it a preferred option for professionals in the electrical and mechanical industries.
Features & Benefits
• Low RDS(on) of 99mΩ improves switching efficiency
• Can dissipate up to 278W for enhanced durability
• Functions well under high temperatures of up to +150°C
• ESD protection above 2kV ensures dependable operation
• Suitable for both hard and soft switching applications
• Packaged in TO-220 for flexible mounting options
Applications
• Used in PFC stages for efficient power conversion
• Applicable in hard-switching PWM stages to boost performance
• Ideal for resonant switching stages in various electronic products
• Utilised in adapters and power supplies for electronic devices
• Effective in industrial automation systems demanding high power
What is the suitable gate-source voltage range for operation?
The appropriate gate-source voltage range for operation is -30V to +30V, ensuring safe and effective switching.
How does the low RDS(on) Value benefit power efficiency?
The low resistance enhances power efficiency by reducing conduction losses, leading to decreased heat generation during operation.
What is the maximum power dissipation capability during usage?
The maximum power dissipation capacity during operation is 278W, allowing robust performance under challenging conditions.
Is there any special consideration for using this component in parallel configurations?
When using in parallel, it is advisable to use ferrite beads on the gate or separate totem poles to optimise performance and minimise oscillations.
What thermal management practices should be implemented?
Effective thermal management practices include proper heat sinking and monitoring temperature during operation to maintain performance within specified limits.
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