N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

RS Stock No.:: 168-4494
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

The image is for reference only, please refer to product details and specifications

Bulk discount available

Subtotal (1 tube of 10 units)**

TWD13,831.00

(exc. GST)

TWD14,522.60

(inc. GST)

410 In stock for delivery within 6 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over TWD2,857.00 (ex VAT)

Units	Per unit	Per Tube**
10 - 40	TWD1,383.10	TWD13,831.00
50 +	TWD1,327.80	TWD13,278.00

**price indicative

RS Stock No.:: 168-4494
Mfr. Part No.:: IXFN60N80P
Manufacturer:: IXYS

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	53 A
Maximum Drain Source Voltage	800 V
Series	HiperFET, Polar
Package Type	SOT-227
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	140 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.04 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	25.42mm
Length	38.23mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	250 nC @ 10 V
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 53 A, 800 V, 4-Pin SOT-227 IXYS IXFN60N80P

FREE delivery for orders over TWD2,857.00 (ex VAT)

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series