IXYS HiperFET, Polar N-Channel MOSFET, 53 A, 800 V Enhancement, 4-Pin SOT-227 IXFN60N80P

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Subtotal (1 tube of 10 units)*

TWD18,300.00

(exc. GST)

TWD19,215.00

(inc. GST)

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Units
Per unit
Per Tube*
10 - 40TWD1,830.00TWD18,300.00
50 +TWD1,756.80TWD17,568.00

*price indicative

RS Stock No.:
168-4494
Mfr. Part No.:
IXFN60N80P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

53A

Maximum Drain Source Voltage Vds

800V

Series

HiperFET, Polar

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

250nC

Maximum Power Dissipation Pd

1.04kW

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-30V, +30V

Maximum Operating Temperature

150°C

Length

38.23mm

Width

25.42mm

Height

9.6mm

Standards/Approvals

No

Automotive Standard

No

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