IXYS HiperFET, Polar N-Channel MOSFET, 72 A, 600 V Enhancement, 4-Pin SOT-227 IXFN82N60P

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Subtotal (1 tube of 10 units)*

TWD14,839.00

(exc. GST)

TWD15,581.00

(inc. GST)

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Units
Per unit
Per Tube*
10 - 10TWD1,483.90TWD14,839.00
20 - 30TWD1,439.60TWD14,396.00
40 +TWD1,397.80TWD13,978.00

*price indicative

RS Stock No.:
168-4484
Mfr. Part No.:
IXFN82N60P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

72A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.04kW

Typical Gate Charge Qg @ Vgs

240nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

-30V, +30V

Maximum Operating Temperature

150°C

Length

38.2mm

Height

9.6mm

Standards/Approvals

No

Width

25.07mm

Automotive Standard

No

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