IXYS HiperFET, Polar N-Channel MOSFET, 66 A, 500 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

TWD11,489.00

(exc. GST)

TWD12,063.40

(inc. GST)

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Units
Per unit
Per Tube*
10 - 40TWD1,148.90TWD11,489.00
50 +TWD1,125.90TWD11,259.00

*price indicative

RS Stock No.:
920-0745
Mfr. Part No.:
IXFN80N50P
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

500V

Series

HiperFET, Polar

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

700W

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

-30V, +30V

Typical Gate Charge Qg @ Vgs

195nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

25.07mm

Height

9.6mm

Length

38.2mm

Automotive Standard

No

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