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IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V Enhancement, 4-Pin SOT-227 IXFN102N30P

RS Stock No.:: 168-4467
Mfr. Part No.:: IXFN102N30P
Manufacturer:: IXYS

IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V Enhancement, 4-Pin SOT-227 IXFN102N30P

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Bulk discount available

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Subtotal (1 tube of 10 units)*

TWD8,899.00

(exc. GST)

TWD9,344.00

(inc. GST)

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Units	Per unit	Per Tube*
10 - 10	TWD889.90	TWD8,899.00
20 - 30	TWD863.50	TWD8,635.00
40 +	TWD845.90	TWD8,459.00

*price indicative

RS Stock No.:: 168-4467
Mfr. Part No.:: IXFN102N30P
Manufacturer:: IXYS

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	IXYS
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	86A
	Maximum Drain Source Voltage Vds	300V
	Series	HiperFET, Polar
	Package Type	SOT-227
	Mount Type	Panel
	Pin Count	4
	Maximum Drain Source Resistance Rds	33mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	224nC
	Maximum Power Dissipation Pd	570W
	Forward Voltage Vf	1.5V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Length	38.23mm
	Width	25.42mm
	Standards/Approvals	No
	Height	9.6mm
	Automotive Standard	No

	Select all
	Brand IXYS
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 86A
	Maximum Drain Source Voltage Vds 300V
	Series HiperFET, Polar
	Package Type SOT-227
	Mount Type Panel
	Pin Count 4
	Maximum Drain Source Resistance Rds 33mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 224nC
	Maximum Power Dissipation Pd 570W
	Forward Voltage Vf 1.5V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Length 38.23mm
	Width 25.42mm
	Standards/Approvals No
	Height 9.6mm
	Automotive Standard No

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IXYS HiperFET, Polar N-Channel MOSFET, 86 A, 300 V Enhancement, 4-Pin SOT-227 IXFN102N30P

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