Infineon OptiMOS P Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-23 BSS314PEH6327XTSA1

RS Stock No.:: 165-8258
Mfr. Part No.:: BSS314PEH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-23 BSS314PEH6327XTSA1

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Subtotal (1 reel of 3000 units)*

TWD9,300.00

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TWD9,780.00

(inc. GST)

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Units	Per unit	Per Reel*
3000 - 12000	TWD3.10	TWD9,300.00
15000 +	TWD2.80	TWD8,400.00

*price indicative

RS Stock No.:: 165-8258
Mfr. Part No.:: BSS314PEH6327XTSA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.5A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS P
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	230mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	500mW
	Typical Gate Charge Qg @ Vgs	2.9nC
	Forward Voltage Vf	-1.1V
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Width	100μm
	Standards/Approvals	No
	Height	1.3mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.5A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS P
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 230mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 500mW
	Typical Gate Charge Qg @ Vgs 2.9nC
	Forward Voltage Vf -1.1V
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Width 100μm
	Standards/Approvals No
	Height 1.3mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS314PEH6327XTSA1

This p-channel MOSFET serves as a compact surface-mount switching device for low-voltage power control in automotive and industrial electronics. Designed for enhancement-mode operation, it offers controlled conduction for power-path and load-switching tasks across a wide temperature range, making it suitable for demanding thermal environments.

Features and Benefits:

• 30V drain capability enables low-voltage system switching
• 230mΩ Rds(on) delivers efficient conduction for small loads
• 1.5A continuous drain current supports moderate current paths
• 2.9nC typical gate charge reduces switching energy losses
• 20V maximum gate-source rating allows flexible gate drive margins
• Automotive AEC‑Q101 qualification suits vehicle‑grade applications

Applications

• Suitable for battery management and protection circuits
• Ideal for load switching in automotive control modules
• Used with power rails in handheld and portable electronics
• Can be used for small-signal power switching in sensor nodes
• Suitable for surface-mount designs where board space is limited

What thermal extremes can it tolerate during operation?

It is specified to operate from -55°C up to 150°C, allowing use in environments with wide temperature variation.

How does the package influence board-level integration?

The SOT-23 surface-mount format permits compact placement and automated assembly on densely populated boards.

What power-handling constraints should designers consider?

The device dissipates up to 500mW, so adequate PCB copper and thermal layout are required to manage junction temperature under continuous load.

Which electrical limit governs gate drive selection?

Drive voltages must remain within ±20V relative to the source to avoid gate overstress and ensure reliable switching.