Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 827-0134
Mfr. Part No.:: BSS215PH6327XTSA1
Manufacturer:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 1.18 A, 20 V Enhancement, 3-Pin SOT-23

The image is for reference only, please refer to product details and specifications

Bulk discount available

View bulk pricing options

Subtotal (1 reel of 250 units)*

TWD1,600.00

(exc. GST)

TWD1,680.00

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
250 - 500	TWD6.40	TWD1,600.00
750 - 1250	TWD6.30	TWD1,575.00
1500 +	TWD5.90	TWD1,475.00

*price indicative

RS Stock No.:: 827-0134
Mfr. Part No.:: BSS215PH6327XTSA1
Manufacturer:: Infineon

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	1.18A
	Maximum Drain Source Voltage Vds	20V
	Series	OptiMOS P
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	500mW
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.6nC
	Forward Voltage Vf	-1.1V
	Maximum Gate Source Voltage Vgs	-12V, +12V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	2.9mm
	Height	1mm
	Width	1.3mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 1.18A
	Maximum Drain Source Voltage Vds 20V
	Series OptiMOS P
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 500mW
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.6nC
	Forward Voltage Vf -1.1V
	Maximum Gate Source Voltage Vgs -12V, +12V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 2.9mm
	Height 1mm
	Width 1.3mm
	Automotive Standard AEC-Q101

Infineon OptiMOS P Series MOSFET, 20V Maximum Drain Source Voltage, 280mΩ Maximum Drain Source Resistance - BSS215PH6327XTSA1

This MOSFET is a P-channel enhancement transistor intended for surface-mount applications in demanding electronic systems. It provides controlled switching functionality for low-voltage circuits, operating across a wide ambient range to suit automotive and industrial conditions, and is housed in a compact SOT-23 package for space-constrained designs.

Features and Benefits:

• Low on-resistance of 280mΩ reduces conduction losses and heatsinking needs
• Maximum drain current 1.18A supports moderate load switching capability
• Drain-source voltage rating of 20V enables safe operation in 12V systems
• Typical gate charge 3.6nC allows faster switching with lower drive energy
• Power dissipation 500mW limits thermal stress in low-power designs
• Rated gate-source tolerance 12V ensures resilience to gate overdrive

Applications

• Suitable for high-side switching in battery management systems
• Ideal for load disconnect in automotive auxiliary circuits
• Used for DC-DC converter control in compact power supplies
• Can be used for reverse polarity protection in 12V installations
• Appropriate for signal-level switching in sensor interface modules

What temperature range can it tolerate during operation?

It is specified to function from -55°C up to 150°C, accommodating extreme thermal environments.

How is the device packaged for assembly on PCBs?

It is supplied in a SOT-23 surface-mount package designed for automated PCB placement and soldering.

What gate drive considerations should I account for?

The device accepts up to 12V between gate and source

ensure gate-drive circuitry limits excursions within this threshold.

Is the device suitable for automotive qualification?

It meets AEC‑Q101 standards appropriate for many automotive electronic designs.