Infineon OptiMOS P Type P-Channel MOSFET, 310 mA, 20 V Enhancement, 3-Pin SC-70
- RS Stock No.:
- 826-9991
- Distrelec Article No.:
- 304-44-427
- Mfr. Part No.:
- BSS223PWH6327XTSA1
- Manufacturer:
- Infineon
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TWD900.00
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TWD945.00
(inc. GST)
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- Plus 1,500 unit(s) shipping from July 27, 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 500 - 500 | TWD1.80 | TWD900.00 |
| 1000 - 1000 | TWD1.80 | TWD900.00 |
| 1500 + | TWD1.70 | TWD850.00 |
*price indicative
- RS Stock No.:
- 826-9991
- Distrelec Article No.:
- 304-44-427
- Mfr. Part No.:
- BSS223PWH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 310mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS P | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1V | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 310mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS P | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1V | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS P Series MOSFET, 310 mA Maximum Continuous Drain Current, 250 mW Maximum Power Dissipation - BSS223PWH6327XTSA1
This MOSFET serves as a crucial element in electronic circuits, acting as a switch or amplifier in numerous applications. Its P-channel design and enhancement mode characteristics enable efficient current control in surface-mounted electronic systems. The component's high-temperature operation capability makes it suitable for automotive and industrial applications where performance in extreme conditions is essential.
Features & Benefits
• Enhances efficiency with low on-resistance of 1.2Ω
• Supports high-temperature operations up to 150°C
• Provides robust performance with a maximum voltage rating of 20V
• Suitable for high-speed switching with minimal delay times
• Complies with AEC-Q101 standards for automotive applications
• Delivers consistent operation with low gate charge characteristics
Applications
• Driving loads in automotive
• Utilised in battery management systems for electric vehicles
• Implemented in power management circuits for consumer electronics
• Employed in amplifiers for audio and electronic devices
• Applied in various automation systems requiring efficient switching
What is the maximum current the component can handle?
The maximum continuous drain current it can handle is 310mA at 25°C, ensuring dependable operation under specified conditions.
How is this component optimised for high-temperature environments?
It is designed to withstand operating temperatures up to +150°C, making it suitable for use in challenging applications.
What type of mounting does this transistor accommodate?
This component is intended for surface mount assembly, facilitating its integration into compact electronic systems.
Does it comply with any automotive standards?
Yes, it is qualified according to AEC-Q101, meeting stringent reliability standards for automotive applications.
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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