Vishay SiHF840S Type N-Channel MOSFET, 8.1 A, 500 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 165-5999
- Mfr. Part No.:
- SIHF840STRL-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 reel of 800 units)*
TWD39,920.00
(exc. GST)
TWD41,920.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from July 20, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 800 - 800 | TWD49.90 | TWD39,920.00 |
| 1600 - 2400 | TWD48.80 | TWD39,040.00 |
| 3200 + | TWD47.70 | TWD38,160.00 |
*price indicative
- RS Stock No.:
- 165-5999
- Mfr. Part No.:
- SIHF840STRL-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.1A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-263 | |
| Series | SiHF840S | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.1A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-263 | ||
Series SiHF840S | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiHF840S Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263 SIHF840STRL-GE3
- Vishay SiHF634S Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- Vishay SiHF634S Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 SIHF634S-GE3
- Vishay Si4435DDY Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Si4435DDY Type P-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4435DDY-T1-GE3
- Infineon IMB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R234M2HXTMA1
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRL6372TRPBF
- Infineon Dual HEXFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC