Vishay E Type N-Channel MOSFET, 19 A, 500 V Enhancement, 3-Pin TO-247 SIHG20N50E-GE3
- RS Stock No.:
- 121-9656
- Mfr. Part No.:
- SIHG20N50E-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Subtotal (1 pack of 2 units)*
TWD238.00
(exc. GST)
TWD249.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 196 unit(s) shipping from June 12, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 + | TWD119.00 | TWD238.00 |
*price indicative
- RS Stock No.:
- 121-9656
- Mfr. Part No.:
- SIHG20N50E-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.87mm | ||
Height 20.82mm | ||
Automotive Standard No | ||
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay E Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-247
- Vishay E Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247