Vishay D Series N-Channel Power MOSFET, 3 A, 500 V Enhancement, 3-Pin TO-252 SIHD3N50D-GE3

The image is for reference only, please refer to product details and specifications

Bulk discount available
View bulk pricing options

Subtotal (1 tube of 50 units)*

TWD1,315.00

(exc. GST)

TWD1,381.00

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
Per Tube*
50 - 200TWD26.30TWD1,315.00
250 +TWD23.70TWD1,185.00

*price indicative

RS Stock No.:
145-1656
Mfr. Part No.:
SIHD3N50D-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

500V

Series

D Series

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.2Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12nC

Maximum Gate Source Voltage Vgs

-30V, +30V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

6.22mm

Length

6.73mm

Height

2.38mm

Automotive Standard

No

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links