Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 228-2839
- Mfr. Part No.:
- SiHA5N80AE-GE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tube of 50 units)*
TWD1,065.00
(exc. GST)
TWD1,118.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 850 unit(s) shipping from January 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | TWD21.30 | TWD1,065.00 |
| 100 - 450 | TWD20.80 | TWD1,040.00 |
| 500 - 950 | TWD20.20 | TWD1,010.00 |
| 1000 - 1950 | TWD19.70 | TWD985.00 |
| 2000 + | TWD19.30 | TWD965.00 |
*price indicative
- RS Stock No.:
- 228-2839
- Mfr. Part No.:
- SiHA5N80AE-GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Series | E | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Series E | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
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