Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252

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Bulk discount available

Subtotal (1 reel of 3000 units)*

TWD51,900.00

(exc. GST)

TWD54,480.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 12000TWD17.30TWD51,900.00
15000 +TWD16.80TWD50,400.00

*price indicative

RS Stock No.:
228-2851
Mfr. Part No.:
SiHD5N80AE-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-252

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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