Vishay TrenchFET Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin SO-8 SIR680DP-T1-RE3

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Subtotal (1 pack of 2 units)*

TWD186.00

(exc. GST)

TWD195.30

(inc. GST)

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  • 5,990 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 748TWD93.00TWD186.00
750 - 1498TWD91.00TWD182.00
1500 +TWD88.00TWD176.00

*price indicative

Packaging Options:
RS Stock No.:
134-9727
Mfr. Part No.:
SIR680DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

69.5nC

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Length

6.25mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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