Toshiba U-MOSVIII-H N-Channel MOSFET, 263 A, 60 V Enhancement, 3-Pin TO-220 TK100E06N1,S1X(S
- RS Stock No.:
- 125-0528
- Mfr. Part No.:
- TK100E06N1,S1X(S
- Manufacturer:
- Toshiba
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
TWD384.00
(exc. GST)
TWD403.20
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | TWD76.80 | TWD384.00 |
| 25 - 45 | TWD75.20 | TWD376.00 |
| 50 - 120 | TWD73.00 | TWD365.00 |
| 125 - 245 | TWD71.80 | TWD359.00 |
| 250 + | TWD70.00 | TWD350.00 |
*price indicative
- RS Stock No.:
- 125-0528
- Mfr. Part No.:
- TK100E06N1,S1X(S
- Manufacturer:
- Toshiba
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 263A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | U-MOSVIII-H | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 255W | |
| Typical Gate Charge Qg @ Vgs | 140nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.45mm | |
| Height | 15.1mm | |
| Length | 10.16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 263A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series U-MOSVIII-H | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 255W | ||
Typical Gate Charge Qg @ Vgs 140nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.45mm | ||
Height 15.1mm | ||
Length 10.16mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
MOSFET Transistors, Toshiba
Related links
- Toshiba U-MOSVIII-H N-Channel MOSFET 100 V EnhancementS1X(S
- Toshiba U-MOSVIII-H N-Channel MOSFET 80 V EnhancementS1X(S
- Toshiba U-MOSVIII-H N-Channel MOSFET 30 V EnhancementLQ(S
- Toshiba U-MOSVIII-H N-Channel MOSFET 30 V EnhancementLQ(S
- Toshiba U-MOSVIII-H N-Channel MOSFET 40 V EnhancementLQ(O
- Toshiba U-MOSVIII-H N-Channel MOSFET 80 V EnhancementLQ(S
- Toshiba U-MOSVIII-H N-Channel MOSFET 80 V EnhancementS4X(S
- Toshiba U-MOSVIII-H N-Channel MOSFET 60 V EnhancementLQ(S