Vishay TrenchFET N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3

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Subtotal (1 pack of 5 units)*

TWD580.00

(exc. GST)

TWD609.00

(inc. GST)

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Units
Per unit
Per Pack*
5 - 45TWD116.00TWD580.00
50 - 95TWD113.00TWD565.00
100 - 245TWD110.40TWD552.00
250 - 995TWD106.60TWD533.00
1000 +TWD104.20TWD521.00

*price indicative

Packaging Options:
RS Stock No.:
228-2904
Mfr. Part No.:
SiR510DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

54nC

Maximum Power Dissipation Pd

104W

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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