Vishay TrenchFET Type N-Channel MOSFET, 126 A, 100 V Enhancement, 8-Pin SO-8 SiR510DP-T1-RE3
- RS Stock No.:
- 228-2904
- Mfr. Part No.:
- SiR510DP-T1-RE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD267.00
(exc. GST)
TWD280.35
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 2,260 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD53.40 | TWD267.00 |
| 50 - 95 | TWD52.00 | TWD260.00 |
| 100 - 245 | TWD50.80 | TWD254.00 |
| 250 - 995 | TWD49.20 | TWD246.00 |
| 1000 + | TWD48.00 | TWD240.00 |
*price indicative
- RS Stock No.:
- 228-2904
- Mfr. Part No.:
- SiR510DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 100 V MOSFET.
100 % Rg and UIS tested
Related links
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 45 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8