Vishay TrenchFET Type N-Channel MOSFET, 51.4 A, 100 V Enhancement, 8-Pin SO-8

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Bulk discount available

Subtotal (1 reel of 3000 units)*

TWD62,100.00

(exc. GST)

TWD65,220.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 12000TWD20.70TWD62,100.00
15000 +TWD20.10TWD60,300.00

*price indicative

RS Stock No.:
228-2911
Mfr. Part No.:
SiR876BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

51.4A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

42.7nC

Maximum Power Dissipation Pd

71.4W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 100 V MOSFET.

100 % Rg and UIS tested

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