Vishay TrenchFET N channel-Channel Power MOSFET, 375 A, 60 V Enhancement Mode, 8-Pin PowerPAK SIHG033N60SF-GE3

N
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Subtotal (1 unit)*

TWD324.00

(exc. GST)

TWD340.20

(inc. GST)

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Units
Per unit
1 - 9TWD324.00
10 - 49TWD201.00
50 - 99TWD122.00
100 +TWD119.00

*price indicative

RS Stock No.:
851-495
Mfr. Part No.:
SIHG033N60SF-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

375A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

PowerPAK

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement Mode

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

101nC

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101 Qualified

Height

1mm

Length

6mm

Width

5mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The Vishay power MOSFET designed for high-performance switching applications, delivering exceptional efficiency and reliability. This component features fast body diode technology, making it suitable for demanding voltage and current conditions.

Latest generation SF series technology enhances performance longevity

Low figure of merit ensures efficient operation

Avalanche energy rated, ensuring robustness under extreme conditions

Material categorization aids compliance in varied applications

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