Vishay TrenchFET N channel-Channel Power MOSFET, 375 A, 60 V Enhancement Mode, 8-Pin PowerPAK SQJQ580E-T1_GE3
- RS Stock No.:
- 851-494
- Mfr. Part No.:
- SQJQ580E-T1_GE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
TWD201.00
(exc. GST)
TWD211.05
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 15, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | TWD201.00 |
| 10 - 49 | TWD125.00 |
| 50 - 99 | TWD76.00 |
| 100 + | TWD74.00 |
*price indicative
- RS Stock No.:
- 851-494
- Mfr. Part No.:
- SQJQ580E-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0Ω | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 101nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Width | 5mm | |
| Length | 6mm | |
| Height | 1mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0Ω | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 101nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Width 5mm | ||
Length 6mm | ||
Height 1mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay automotive MOSFET is an Automotive N-Channel device designed for reliable power management. It excels in high-temperature conditions, ensuring efficient performance across diverse applications in the automotive sector.
TrenchFET Gen V technology enhances power efficiency
AEC-Q101 qualified for stringent automotive standards
Maximum drain-source voltage of 80 V ensures robust operation
Low on-state resistance delivers efficient performance
Related links
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerPAK SQRS160ELP-T1_GE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerPAK SIHG033N60SF-GE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerPAK SQJA36EP-T1_BE3
- Vishay TrenchFET N channel-Channel Single MOSFETs 80 V Enhancement Mode, 8-Pin PowerPAK (8x8LR) SQJQ580ER-T1_GE3
- Vishay TrenchFET N-Channel Single MOSFETs 70 V Enhancement Mode, 8-Pin PowerPAIR 3 x 3FS SIZF458LDT-T1-UE3
- Vishay SISS N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS862ADN-T1-UE3
- STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerFLAT
- Vishay SISS N channel-Channel Single MOSFETs 60 V Enhancement Mode, 8-Pin PowerPAK 1212-8SLW SISS4634LDN-T1-GE3