Vishay TrenchFET N channel-Channel Single MOSFETs, 352 A, 80 V Enhancement Mode, 8-Pin PowerPAK (8x8LR) SQJQ580ER-T1_GE3
- RS Stock No.:
- 847-933
- Mfr. Part No.:
- SQJQ580ER-T1_GE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
TWD170.00
(exc. GST)
TWD178.50
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from March 15, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | TWD170.00 |
| 10 - 49 | TWD106.00 |
| 50 - 99 | TWD64.00 |
| 100 + | TWD63.00 |
*price indicative
- RS Stock No.:
- 847-933
- Mfr. Part No.:
- SQJQ580ER-T1_GE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 352A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK (8x8LR) | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00144Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.60mm | |
| Length | 8mm | |
| Standards/Approvals | RoHS3 Compliant | |
| Width | 8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 352A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK (8x8LR) | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00144Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Maximum Gate Source Voltage Vgs 12V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 1.60mm | ||
Length 8mm | ||
Standards/Approvals RoHS3 Compliant | ||
Width 8mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N-Channel power MOSFET delivers efficient high-performance switching for a variety of demanding applications, ensuring reliability under extreme conditions.
TrenchFET Gen V technology ensures enhanced efficiency and performance
AEC-Q101 qualified for automotive applications, assuring compliance with industry standards
Continuous drain current rated at 352 A under standard conditions
Thin profile of 1.9 mm maximises space efficiency in designs
100% tested for R and UIS, ensuring reliable operation
Related links
- Vishay TrenchFET N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ118ER-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ570ER-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ160ER-T1_GE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerPAK SQJQ580E-T1_GE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerPAK SQRS160ELP-T1_GE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerPAK SIHG033N60SF-GE3
- Vishay TrenchFET N channel-Channel Power MOSFET 60 V Enhancement Mode, 8-Pin PowerPAK SQJA36EP-T1_BE3
- Vishay TrenchFET N-Channel Single MOSFETs 70 V Enhancement Mode, 8-Pin PowerPAIR 3 x 3FS SIZF458LDT-T1-UE3