Vishay SI P-Channel Single MOSFETs, -120 A, -60 V Enhancement Mode, 3-Pin TO-263 SQM120P06-07L_NE3
- RS Stock No.:
- 829-359
- Mfr. Part No.:
- SQM120P06-07L_NE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD172.00
(exc. GST)
TWD180.60
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- Shipping from April 19, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD172.00 |
| 10 - 49 | TWD106.00 |
| 50 - 99 | TWD65.00 |
| 100 + | TWD63.00 |
*price indicative
- RS Stock No.:
- 829-359
- Mfr. Part No.:
- SQM120P06-07L_NE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -120A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Package Type | TO-263 | |
| Series | SI | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0067Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.28mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 10.16mm | |
| Height | 4.57mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -120A | ||
Maximum Drain Source Voltage Vds -60V | ||
Package Type TO-263 | ||
Series SI | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0067Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Width 10.28mm | ||
Standards/Approvals RoHS Compliant | ||
Length 10.16mm | ||
Height 4.57mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- GB
The Vishay automotive P-Channel power MOSFET designed for high-performance applications, providing a robust solution for effective power management in automotive environments.
TrenchFET technology enhances efficiency and reduces power loss
AEC-Q101 qualified for reliability in automotive applications
Low thermal resistance package ensures optimal heat dissipation
Excellent on-state resistance at varying gate voltages improves performance
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