Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-104
- Mfr. Part No.:
- SISS32LDN-T1-BE3
- Manufacturer:
- Vishay
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 tape of 1 unit)*
TWD34.00
(exc. GST)
TWD35.70
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 6,000 unit(s) shipping from May 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | TWD34.00 |
| 25 - 99 | TWD33.00 |
| 100 - 499 | TWD32.00 |
| 500 - 999 | TWD27.00 |
| 1000 + | TWD25.00 |
*price indicative
- RS Stock No.:
- 653-104
- Mfr. Part No.:
- SISS32LDN-T1-BE3
- Manufacturer:
- Vishay
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | SISS32LDN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0072Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 17.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.75mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series SISS32LDN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0072Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 17.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.75mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The Vishay TrenchFET Gen IV N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a Compact PowerPAK 1212-8S, it's Ideal for DC/DC converters, synchronous rectification, motor control, and battery/load switching.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay SISS32LDN Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3
- Vishay SIR626LDP N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR626LDP-T1-BE3
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK SISS178LDN-T1-UE3
- Vishay SIRA18DDP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK
- Vishay E Type N-Channel Single MOSFETs 600 V Enhancement, 8-Pin PowerPAK
- Vishay SIS4406DN Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin PowerPAK
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK