Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3

RS Stock No.:: 653-103
Mfr. Part No.:: SISS32LDN-T1-BE3
Manufacturer:: Vishay

Vishay SISS32LDN Type N-Channel Single MOSFETs, 63 A, 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3

The image is for reference only, please refer to product details and specifications

Subtotal (1 reel of 3000 units)*

TWD66,600.00

(exc. GST)

TWD69,930.00

(inc. GST)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
3000 +	TWD22.20	TWD66,600.00

*price indicative

RS Stock No.:: 653-103
Mfr. Part No.:: SISS32LDN-T1-BE3
Manufacturer:: Vishay

Specifications

Product overview and Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Continuous Drain Current Id	63A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PowerPAK
	Series	SISS32LDN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.0072Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	17.7nC
	Maximum Power Dissipation Pd	65.7W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	0.75mm
	Length	3.3mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Continuous Drain Current Id 63A
	Maximum Drain Source Voltage Vds 80V
	Package Type PowerPAK
	Series SISS32LDN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.0072Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 17.7nC
	Maximum Power Dissipation Pd 65.7W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 0.75mm
	Length 3.3mm
	Automotive Standard No

Datasheet - SISS32LDN-T1-BE3

COO (Country of Origin):: TH

Vishay SISS32LDN Series Single MOSFETs, 80V Maximum Drain Source Voltage, 63A Maximum Continuous Drain Current - SISS32LDN-T1-BE3

This single MOSFETs device is a high-current N-channel transistor designed for surface-mount power switching in industrial electronics. It operates as an enhancement-mode MOSFET suitable for driving and switching applications where elevated drain-source voltage and robust current handling are required. The component is supplied in a Compact PowerPAK package intended for SMD assembly and complies with RoHS requirements.

Features and Benefits:

• 80V drain-source rating enables high-voltage switching capability • 63A continuous drain current supports heavy-load conduction • Low RDS(on) 0.0072Ω minimises conduction losses under load • 65.7W power dissipation allows sustained thermal throughput • 17.7nC typical gate charge affords controlled switching energy • 150°C maximum operating temperature permits high-temperature operation

Applications

• Suitable for motor-drive half-bridge stages in automation systems • Ideal for DC-DC converters in power distribution modules • Used for load switching in industrial control equipment • Can be used for battery management and high-current distribution

What gate-voltage limits should designers observe?

The gate-to-source voltage must not exceed ±20V to prevent gate-dielectric stress.

What thermal considerations apply during PCB layout?

Given the 65.7W dissipation rating, designers should provide adequate copper area and thermal vias for heat spreading and connect to a heatsinking plane where necessary.

How does switching behaviour impact electromagnetic emissions?

The 17.7nC gate charge influences rise and fall times

controlling gate-drive slew rates and adding snubbers helps manage switching transients and EMI.

What ambient extremes can the device tolerate during operation?

It is specified for use down to -55°C and up to 150°C junction temperature for broad environmental range compatibility.