Vishay SISS52DN N channel-Channel MOSFET, 162 A, 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3

N
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Subtotal (1 tape of 1 unit)*

TWD43.00

(exc. GST)

TWD45.15

(inc. GST)

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Tape(s)
Per Tape
1 - 9TWD43.00
10 - 24TWD28.00
25 - 99TWD15.00
100 +TWD14.00

*price indicative

RS Stock No.:
736-353
Mfr. Part No.:
SISS52DN-T1-BE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK 1212-8S

Series

SISS52DN

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00095Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

16V

Maximum Power Dissipation Pd

57W

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

38nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for robust switching applications, offering excellent efficiency and reliability in power management solutions.

Tested for 100% R g and UIS, ensuring superior reliability

Material compliance categorisation enhances environmental safety

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