ROHM RD3 Type N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-252 RD3G08CBKHRBTL
- RS Stock No.:
- 265-416
- Mfr. Part No.:
- RD3G08CBKHRBTL
- Manufacturer:
- ROHM
The image is for reference only, please refer to product details and specifications
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
TWD448.00
(exc. GST)
TWD470.40
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 2,490 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | TWD44.80 | TWD448.00 |
| 100 - 240 | TWD42.60 | TWD426.00 |
| 250 - 490 | TWD39.40 | TWD394.00 |
| 500 - 990 | TWD36.30 | TWD363.00 |
| 1000 + | TWD34.90 | TWD349.00 |
*price indicative
- RS Stock No.:
- 265-416
- Mfr. Part No.:
- RD3G08CBKHRBTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | RD3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 96W | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series RD3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 96W | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is AEC-Q101 qualified, making it an excellent choice for Advanced Driver Assistance Systems, infotainment, lighting, and body applications. Its robust design ensures reliable performance in critical automotive environments.
Pb free lead plating
RoHS compliant
100 percent avalanche tested
Low on resistance
Related links
- ROHM RD3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 RD3L04BBKHRBTL
- ROHM RD3 Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G08BBJHRBTL
- ROHM RD3 Type N-Channel Single MOSFETs 3-Pin TO-252 RD3P04BBKHRBTL
- ROHM RD3 Type N-Channel Single MOSFETs 3-Pin TO-252 RD3L04BBLHRBTL
- ROHM RD3 Type P-Channel Single MOSFETs 3-Pin TO-252 RD3L03BBJHRBTL
- STMicroelectronics DeepGate 80 A 3-Pin TO-252
- STMicroelectronics DeepGate 80 A 3-Pin TO-252 STD80N4F6
- ROHM RD3 Type P-Channel MOSFET 100 V, 3-Pin TO-252 RD3P130SPFRATL