ROHM AG194FPD3HRB N-Channel Single MOSFETs, 80 A, 100 V Enhancement, 3-Pin TO-252 (TL) AG194FPD3HRBTL
- RS Stock No.:
- 687-353
- Mfr. Part No.:
- AG194FPD3HRBTL
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 2 units)*
TWD146.00
(exc. GST)
TWD153.30
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- Plus 100 unit(s) shipping from October 19, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | TWD73.00 | TWD146.00 |
| 20 - 98 | TWD64.00 | TWD128.00 |
| 100 - 198 | TWD57.50 | TWD115.00 |
| 200 + | TWD45.50 | TWD91.00 |
*price indicative
- RS Stock No.:
- 687-353
- Mfr. Part No.:
- AG194FPD3HRBTL
- Manufacturer:
- ROHM
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 (TL) | |
| Series | AG194FPD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 10.5mm | |
| Width | 6.8mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 (TL) | ||
Series AG194FPD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 10.5mm | ||
Width 6.8mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for applications requiring robust power management. Operating at a maximum of 100V and capable of handling continuous currents up to 80A, this component excels in delivering low on-resistance, thus minimising power loss in demanding automotive systems. Its Pb-free plating and compliance with RoHS standards ensure both environmental safety and reliability. Notably, the device is fully qualified under AEC-Q101, making it suitable for automotive applications where performance and resilience are critical. With a power dissipation capability of 142W and stringent avalanche testing, this MOSFET supports reliable operation in a variety of high-performance circuits.
Offers a low on resistance of 6.2mΩ for improved efficiency
Rated for continuous drain current of 80A, suitable for high-power applications
Features a breakdown voltage of 100V providing robustness against voltage spikes
AEC Q101 qualified, ensuring reliability in automotive environments
Avalanche tested, allowing for safe operation under transient conditions
Pb free and RoHS compliant, aligning with environmental standards
Ideal for automotive systems, enhancing power management capabilities
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