Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 64 A, 1.2 kV Enhancement, 4-Pin Tape & Reel
- RS Stock No.:
- 427-757
- Mfr. Part No.:
- DM400S12TDRB
- Manufacturer:
- Starpower
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
TWD418.00
(exc. GST)
TWD438.90
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 20 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | TWD418.00 |
| 10 - 99 | TWD376.00 |
| 100 - 499 | TWD347.00 |
| 500 - 999 | TWD322.00 |
| 1000 + | TWD261.00 |
*price indicative
- RS Stock No.:
- 427-757
- Mfr. Part No.:
- DM400S12TDRB
- Manufacturer:
- Starpower
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Channel Type | Single Switch | |
| Product Type | SiC Mosfet without Diode | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | Tape & Reel | |
| Series | DOSEMI | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 55.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 268W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Forward Voltage Vf | 3.85V | |
| Typical Gate Charge Qg @ Vgs | 86.6nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Channel Type Single Switch | ||
Product Type SiC Mosfet without Diode | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type Tape & Reel | ||
Series DOSEMI | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 55.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 268W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Forward Voltage Vf 3.85V | ||
Typical Gate Charge Qg @ Vgs 86.6nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower MOSFET Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Low inductance case avoid oscillations
ROHS
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