ROHM BSM 2 N-Channel SiC Power Module, 300 A, 1.2 kV Enhancement, 4-Pin BSM300D12P2E001

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TWD46,008.00

(exc. GST)

TWD48,308.40

(inc. GST)

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2 +TWD44,858.00

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RS Stock No.:
144-2260
Mfr. Part No.:
BSM300D12P2E001
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

N

Product Type

SiC Power Module

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

1.2kV

Series

BSM

Mount Type

Surface

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1875W

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Height

17mm

Length

152mm

Width

57.95mm

Number of Elements per Chip

2

COO (Country of Origin):
JP

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration

Low Surge Current

Low Power Switching Losses

High-Speed Switching

Low Operating Temperature

MOSFET Transistors, ROHM Semiconductor


Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

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