STMicroelectronics Type N-Channel MOSFET, 7 A, 1200 V Enhancement, 3-Pin Tape & Reel STH12N120K5-2AG
- RS Stock No.:
- 261-5047
- Mfr. Part No.:
- STH12N120K5-2AG
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 unit)*
TWD389.00
(exc. GST)
TWD408.45
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 566 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 1 - 9 | TWD389.00 |
| 10 - 99 | TWD371.00 |
| 100 - 249 | TWD351.00 |
| 250 + | TWD334.00 |
*price indicative
- RS Stock No.:
- 261-5047
- Mfr. Part No.:
- STH12N120K5-2AG
- Manufacturer:
- STMicroelectronics
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.9Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.8mm | |
| Height | 4.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.9Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 15.8mm | ||
Height 4.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
AEC-Q101 qualified
Industry’s lowest RDS(on) x area
Industry’s best FoM (figure of merit)
Ultra-low gate charge
100% avalanche tested
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