Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V
- RS Stock No.:
- 244-5391
- Mfr. Part No.:
- FP25R12W2T4B11BOMA1
- Manufacturer:
- Infineon
The image is for reference only, please refer to product details and specifications
Bulk discount available
Subtotal (1 unit)*
TWD1,360.00
(exc. GST)
TWD1,428.00
(inc. GST)
FREE delivery for orders over NT$1,300.00
In Stock
- 6 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | TWD1,360.00 |
| 2 - 2 | TWD1,332.00 |
| 3 - 3 | TWD1,307.00 |
| 4 - 4 | TWD1,281.00 |
| 5 + | TWD1,255.00 |
*price indicative
- RS Stock No.:
- 244-5391
- Mfr. Part No.:
- FP25R12W2T4B11BOMA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 175W | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Length | 51mm | |
| Height | 12mm | |
| Series | FP25R12W2T4B11B | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 175W | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Length 51mm | ||
Height 12mm | ||
Series FP25R12W2T4B11B | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
Related links
- Infineon IGBT Module 1200 V
- Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V
- Infineon FP25R12W2T4BOMA1 IGBT Module 1200 V
- Infineon FP100R12KT4B11BOSA1 IGBT Module 1200 V
- Infineon F475R06W1E3BOMA1 IGBT Module 1200 V
- Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V
- Infineon FP10R12W1T4BOMA1 IGBT Module 1200 V
- Infineon FP100R12KT4BOSA1 IGBT Module 1200 V