Infineon FP10R12W1T4BOMA1 IGBT Module 1200 V

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Bulk discount available

Subtotal (1 unit)*

TWD1,044.00

(exc. GST)

TWD1,096.20

(inc. GST)

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Temporarily out of stock
  • 24 unit(s) shipping from July 16, 2026
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Units
Per unit
1 - 1TWD1,044.00
2 - 2TWD1,024.00
3 - 3TWD1,003.00
4 - 4TWD983.00
5 +TWD962.00

*price indicative

Packaging Options:
RS Stock No.:
244-5384
Mfr. Part No.:
FP10R12W1T4BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

105W

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Length

62.8mm

Height

12mm

Series

FP10R12W1T4B

Standards/Approvals

RoHS

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.

Electrical features

Low switching losses

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

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