Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V

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Bulk discount available

Subtotal (1 unit)*

TWD3,392.00

(exc. GST)

TWD3,561.60

(inc. GST)

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Units
Per unit
1 - 1TWD3,392.00
2 - 2TWD3,323.00
3 +TWD3,258.00

*price indicative

Packaging Options:
RS Stock No.:
244-5848
Mfr. Part No.:
FP75R12KT4B11BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Number of Transistors

7

Maximum Power Dissipation Pd

385W

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

62 mm

Length

122mm

Series

FP75R12KT4B11B

Standards/Approvals

RoHS

Height

17mm

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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