Infineon FP100R12KT4B11BOSA1 IGBT Module, 100 A 1200 V
- RS Stock No.:
- 244-5377
- Mfr. Part No.:
- FP100R12KT4B11BOSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
TWD4,223.00
(exc. GST)
TWD4,434.15
(inc. GST)
FREE delivery for orders over NT$1,300.00
Temporarily out of stock
- 10 unit(s) shipping from April 16, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | TWD4,223.00 |
| 2 - 2 | TWD4,138.00 |
| 3 + | TWD4,056.00 |
*price indicative
- RS Stock No.:
- 244-5377
- Mfr. Part No.:
- FP100R12KT4B11BOSA1
- Manufacturer:
- Infineon
Specifications
Product overview and Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Maximum Power Dissipation | 515 W | |
| Number of Transistors | 7 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 515 W | ||
Number of Transistors 7 | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives and servo drives etc.
Electrical features
Low switching losses
Tvj op = 150° C
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
High power and thermal cycling capability
Integrated NTC temperature sensor
Copper base plate
Pressfit contact technology
Standard housing
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